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 SUP18N15-95
New Product
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
150
rDS(on) (W)
0.095 @ VGS = 10 V 0.100 @ VGS = 6 V
ID (A)
18 17.5
D TrenchFETr Power MOSFETS D 175_C Junction Temperature
APPLICATIONS
D 42-V Automotive Bus
TO-220AB
D
G DRAIN connected to TAB
GDS Top View
S N-Channel MOSFET
SUP18N15-95
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa L = 0.1 mH TC = 25_C TC = 25_C TC = 125_C ID IDM IAR EAR PD TJ, Tstg
Symbol
VDS VGS
Limit
150 "20 18 10.3 25 15 16.2 88b -55 to 175
Unit
V
A
mJ W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (Free Air) Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. Document Number: 71642 S-04093--Rev. A, 25-Jun-01 www.vishay.com
Symbol
RthJA RthJC
Limit
85 1.7
Unit
_C/W _
1
SUP18N15-95
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V, TJ = 125_C VDS = 120 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb VGS = 10 V, ID = 15 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 6 V, ID = 10 A Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 0.081 25 25 0.077 0.095 0.190 0.250 0.100 S W 150 V 2 "100 1 50 250 A m mA nA
Symbol
Test Condition
Min
Typa
Max
Unit
Dynamica
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 75 V, RL = 5 W ID ^ 15 A, VGEN = 10 V, RG = 2.5 W VDS = 75 V, VGS = 10 V, ID = 15 A VGS = 0 V, VDS = 25 V, f = 1 MHz 900 115 70 20 5.5 7 8 35 17 30 12 55 25 45 ns 25 nC pF
Gate-Drain Chargec Turn-On Delay Timec Rise Timec
Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 15 A, di/dt = 100 A/ms m IF = 15 A, VGS = 0 V 0.9 55 5 0.13 15 A 25 1.5 85 8 0.34 V ns A mC
Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Guaranteed by design, not subject to production testing. b. Independent of operating temperature.
www.vishay.com
2
Document Number: 71642 S-04093--Rev. A, 25-Jun-01
SUP18N15-95
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25 VGS = 10 thru 6 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 25
Vishay Siliconix
Transfer Characteristics
15 5V 10
15
10 TC = 125_C 5 25_C -55_C 0
5 3V 0 0 2 4 6 8 10 4V
0
1
2
3
4
5
6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transconductance
40 TC = -55_C 0.12 32 g fs - Transconductance (S) r DS(on)- On-Resistance ( W ) 25_C 0.10 0.14
On-Resistance vs. Drain Current
VGS = 6 V 0.08 VGS = 10 V 0.06 0.04 0.02 0.00
24
125_C
16
8
0 0 5 10 15 20 25
0
5
10
15
20
25
ID - Drain Current (A)
ID - Drain Current (A)
Capacitance
1500 20
Gate Charge
1200 C - Capacitance (pF) Ciss
V GS - Gate-to-Source Voltage (V)
16
VDS = 75 V ID = 15 A
900
12
600
8
300
Crss Coss
4
0 0 20 40 60 80 100
0 0 8 16 24 32 40
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Document Number: 71642 S-04093--Rev. A, 25-Jun-01
www.vishay.com
3
SUP18N15-95
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.8 2.4 r DS(on)- On-Resistance ( W ) (Normalized) 2.0 1.6 1.2 0.8 0.4 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 VGS = 10 V ID = 15 A I S - Source Current (A) 100
Source-Drain Diode Forward Voltage
TJ = 150_C 10
TJ = 25_C
TJ - Junction Temperature (_C)
VSD - Source-to-Drain Voltage (V)
Drain-Source Voltage Breakdown vs. Junction Temperature
185 180 175 (V) 170 165 160 155 150 145 -50
V (BR)DSS
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
www.vishay.com
4
Document Number: 71642 S-04093--Rev. A, 25-Jun-01
SUP18N15-95
New Product
THERMAL RATINGS
Maximum Avalanche Drain Current vs. Case Temperature
20 100
Vishay Siliconix
Safe Operating Area
15 I D - Drain Current (A) I D - Drain Current (A) 10
Limited by rDS(on)
10 ms 100 ms
10
1 TC = 25_C Single Pulse
1 ms 10 ms 100 ms 1 s, dc
5
0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C)
0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.02 0.05 Single Pulse
0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec)
Document Number: 71642 S-04093--Rev. A, 25-Jun-01
www.vishay.com
5


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